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Diotec Semiconductor introduces its latest Silicon Carbide (SiC) MOSFET, DIW065SIC015, featuring the lowest RDS(on) values in its portfolio at 15 mΩ. It is encapsulated in the classic and familiar TO-247-3L package, which is easy to implement in the circuit design of any high power application. This part is ideally suited for high efficient, high frequency power supplies used in server stations. In addition, it can cover a comprehensive portfolio of various applications like Photovoltaic Inverters, Industrial Machinery and Power Conversion Systems.

In power electronics, industries are striving to deliver higher power while maintaining or improving overall efficiency. Enter SiC, the next-generation technology that is making waves, outshining its traditional predecessor, Si-based power MOSFETS, with its superior voltage breakdown and significantly reduced power dissipation. The use of wide bandgap technology allows these devices to operate reliably in high temperature environments. In addition, with faster switching times, SiC MOSFETs exhibit lower switching losses per cycle, thereby improving efficiency and maintaining higher switching speeds in power conversion systems. As a result, SiC MOSFETs are emerging as the primary solution for a wide range of applications, particularly those involving high-voltage switching at higher frequencies where Si-based IGBTs are limited.