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Discover our bootstrap diode BYG23T in SMA package, well suited for high-side floating gate driver circuits. The major challenge here is to select a robust device with respect to high voltage peaks during low side MOSFET or IGBT turn-off, as well as forward surge currents during re-charging of the storage capacitor. High frequency operation is state-of-the-art in these applications.

The BYG23T features an avalanche rating of 5mJ with breakdown voltage of 1350V and a very low reverse recovery time of 75ns. Repetitive peak forward current rating is 3A, and average forward current 1A.

Various half-bridge gate driver circuits are currently available in the market with integrated bootstrap diodes. The total power dissipation of such gate driver IC is the combination of gate driver losses and the internal bootstrap diode losses. The difficulty with this circuit is the operation at higher frequencies and load capacitance applications, where the power losses in the internal bootstrap diode dominates the overall power dissipation.

An external bootstrap diode, even if in parallel with the internal one, can significantly overcome the problem of excessive power losses in the driver IC. A stand-alone operation is of course possible as well.

 

我们的工业电机控制和驱动应用说明包含从输入整流器开始，通过制动斩波器到输出逆变器的整个逆变电路专用功率半导体，还包括引导二极管、TVS门保护和有源箝位装置。

首次向公众展示，我们在此应用说明我们的新系列功率mosfet和电压调节器。这些零件计划在今年年底前提供。好奇吗?您可以在这里下载应用程序说明并亲自查看!

Diotec's -3G Schottky Technology encompasses high power handling capability at small package outlines. It offers state-of-the-art performance in the field of Schottky Rectifiers. Reduced forward voltage Vf and low reverse leakage current Ir are two common features of all these new devices.

Lighting is an essential element in our present world. It plays a decisive role in our daily lives, right from low power indoor lighting at home, to mid and high power outdoor lighting, industrial and horticulture lighting systems. Lighting accounts for about 15% of global electricity consumption.

A new era came with the light emitting diodes (LED). They consume little electricity, are long lasting, versatile and contain no toxic substances. LEDs are the future for lighting. Other intelligent technologies such as digital lighting control systems and smart lighting solutions are emerging in the market, further ensuring an increase in efficiency, greater energy savings and thus lower the carbon emissions.

By choosing the best suited semiconductor components in the design, power losses decrease and energy savings can be pushed even further. Hence, the selection of the right components can also boost-up the overall performance.
We at Diotec Semiconductor focus on supplying high quality products like the 3rd generation Schottky diodes. Their features like low to very low Vf and lower leakage currents make them well suited for a variety of lighting applications like LED lamp drivers, lighting controls, polarity protection of automotive lighting systems and many more.

Our actual -3G Schottky portfolio includes rectifier diodes with (very) low forward voltage drop, reverse voltages from 20V to 45V and forward current ratings from 0.5A to 30A. A new flyer shows dedicated Schottky diodes for lighting applications. If you prefer reading a hardcopy, you can order it here.

Main Features of -3G Schottky Technology:

- Very Low Forward Voltage
- Low Reverse Current
- High Power Capability
- High ESD Robustness
- Energy Savings
- Available with AEC-Q101 grading

-3G Schottky devices are also available for Industrial, Consumer, Energy and Mobility Applications. You can download our flyer here on our website.

 

Diotec proudly launches one such device: a 3rd generation Schottky device, which offers not only lower (very) forward voltage drop and therefore lower forward losses but also lower leakage currents, which allows higher standby durations.

The new SK34SMA L217 15MQ040N is a SMD Schottky diode where Vf and Ir were perfectly matched towards the customer's needs. Its a bit of a bulky part number but this can be explained as follows.

The challenge in this case was to build an output rectifier for wireless charging of a battery powered device. During stand-by mode, the reverse leakage Ir must be very low in order to avoid too fast discharging of the battery. In charging mode, the forward voltage Vf must be reduced to provide high efficieny and fast charging times.

Here the typical parameters requested for the output rectifier of the wireless charging system:

Vf typ 0.35 V @ 2 A / 125°C
Ir typ 8 µA @ 4 V / 50°C

Based on our flagship in SMA, the 3A/40V SK34SMA-3G, we built the special version L217. Our customer, a leading manufacturer of battery powered consumer devices, confirmed that this customized device outperforms impressively the parameters of the industry standard 15MQ040N.